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- Kathryn McGill (CNF Fellow), 6/12/15
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As of 10/19/16 (though truly from 2013-2014 during MoS2 work):
Chip Spinning:
- spin 4% 495
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- @ 3000 rpm, 1000 ramp, 60 s (resist will be ~150 nm thick)
- bake @ 170 °C for 15 min
- spin 2% 950
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- @ 3000 rpm, 1000 ramp, 60 s (resist will be ~50 nm thick)
- bake @ 170 °C for 15 min
(develop in 1:3 MIBK:IPA - see below - & lift-off in 1:1 methylene chloride:acetone)
E-beam Writing on the Nabity
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- Measure the current in pA for
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- all apertures you are going to use (typically, 10 µm
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- ap => 30-40 pA & 60 µm
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Set up run files (see screenshots below).
- ap => ~1000+ pA)
- Parameters common to all run files (including alignment):
- gun @ 20 kV
- 900 magnification
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- general params:
- Non-stop writing mode ⇒ yes
- Disable automated stage control ⇒ no
- Disable digital SEM control ⇒ no
- Disable x-y focus mode ⇒ yes
- Enable global rotation correction ⇒ no
- alignment windows:
- counts of 15
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- center-to-center
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- spacing 50 nm
- line spacing of 50 nm
- pattern writing of fine
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- features:
- 10 µm aperture (set in Supra system, not Nabity system)
- continuous write
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- center-to-center
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- spacing 5 nm
- line spacing of 5 nm
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- 300 µC/cm^2 area dose
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- pattern writing of large features:
- 60 µm aperture (set in Supra system, not Nabity system)
- continuous write
- center-to-center
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- spacing 30 nm
- line spacing of 30 nm
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- 500 µC/cm^2 area dose
*see screenshots below
Development
Development
- 45 sec in 1:3 MIBK:IPA (shake chip back-and-forth in soln) & quench in IPA; N2 dry
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1:1 methylene chloride:acetone overnight
Walk-through
step 1 - copy gds file into this directory:
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step 6.1 - skip all but contact pad layer - enter params - remember to update measure measured current - proceed as before:
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