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Alex Alexander Ruyack, CNF Fellow - Jan. 2017 - Parts re-purposed from 2017 issue of the Nanometer
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Introduction
Nanolithography is a fundamental requirement for the future of electronics patterning. Current trends indicate the end of Moore’s Law for traditional lithography processes. Directed self-assembly (DSA) of block copolymers (BCPs) can generate ordered, periodic arrays of various structures down to single nanometer (nm) size scale. The heterogeneous nature of these structures act intrinsically as their own mask, enabling nanometer (nm) scale resolution with a flood exposure and no traditional photo mask. BCP lithography offers low-cost processing of nm scale periodic structures typically only available by e-beam lithography, and can act as a complementary technology to conventional photolithography.
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For general reading about BCPs, I suggest [81].
References
[1] C. Bates, et al., “Block Copolymer Lithography,” Macromolecules, 2014, 47 (1), pp 2-12.
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[5] N. Lynda, A. J. Meuler, M. A. Hillmyer, “Polydispersity and block copolymer self-assembly,” Prog. Polym. Sci., 33 (9), 2008, pp. 875-893.
[6] Yushu Y. Matsushita, et al., “Molecular Weight Dependence of Lamellar Domain Spacing of Diblock Copolymers in Bulk,” Macromolecules, 1990, 23 (19), pp 4313-4316.
[7] J. Kim, et al., “Directed self-assembly of block copolymers for next generation nanolithography,” Mater. Today, 16 (12), 2013, pp 468-476.[8] C. Bates, et al., “Block Copolymer Lithography,” Macromolecules, 2014, 47 (1), pp 2-12.
Upcoming: PS-b-PDMS for <10nm lines and pillars!