Kathleen Smith

August 22, 2024​


Conditions:​

18 sccm CH2F2​

72 sccm He​

1500 W ICP​

35 W RIE​

4 mTorr​

​DC bias: 150 V​


Resist selectivity: > 4.4:1​


Etch rate: ~80 nm/min


Sidewall Angle: ~92.8o

​

 


1 μm Trench


 

1 μm Trench


 


500 nm Trench​


 



 



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