All in One Lithography Simulation
Equipment Training Please contact the Alan Bleier for training. |
Lithography simulation enables virtual exploration of a huge parameter space in little time. The fast and accurate calculation of the intensity image enables layout optimization (OPC), mask layout verification, optimization of process conditions (e.g. illumination, stack) and process window (e.g. gap or defocus and exposure dose variation) by varying layout and/or exposure parameters. Thousands of experiments can be computed “overnight” without producing masks or “burning” wafers.
Import, Export of all major layout for mats (GDSII, CIF, DXF)