PLEASE NOTE: The following information suggests etch tools for specific materials. However, (this information) is not regularly updated. For up-to-date etch rates, please see specific tool pages.

Anisotropic silicon

• Equipment: Plasmatherm PT 770 left side
• Ambient: Cl2, BCl3, H2
• Etch rate (A/min): 3000
• Selectivity: 10:1 oxide
• Substrate size: 3 inch, 100 mm

Isotropic silicon release etch

• Equipment: Plasmatherm PT 72
• Ambient: SF6/O2
• Etch rate (A/min): 1100
• Selectivity: 300:1 oxide
• Substrate size: up to 200 mm

• Equipment: Oxford 80
• Ambient: SF6/O2
• Etch rate (A/min):
• Selectivity:
• Substrate size: up to 200 mm

Polysilicon

• Equipment: Plasmatherm PT 770 left side
• Ambient: Cl2, BCl3, H2
• Etch rate (A/min): 1500
• Selectivity: 3:1 nitride, 7:1 oxide
• Substrate size: 3 inch, 100 mm

Silicon dioxide

• Equipment: Plasmatherm PT 72
• Ambient: CHF3/O2
• Etch rate (A/min): 255
• Selectivity: 2:1 resist, 5:1 silicon
• Substrate size: up to 150 mm

• Equipment: Oxford 80
• Ambient: CHF3/O2
• Etch rate (A/min): 300
• Selectivity: 2:1 resist, 5:1 silicon
• Substrate size: up to 150 mm

PSG

• Equipment: Plasmatherm PT 72
• Ambient: CHF3/O2
• Etch rate (A/min): 330
• Selectivity: 2:1 resist
• Substrate size: up to 150 mm

Silicon nitride and low stress silicon nitride

• Equipment: Plasmatherm PT 72
• Ambient: CF4/H2
• Etch rate (A/min): 290
• Selectivity: 2:1 resist
• Substrate size: up to 200 mm

• Equipment: Oxford 80
• Ambient: CHF3/O2
• Etch rate (A/min): 600-650 for LPCVD, 750 PECVD
• Selectivity: 3:1 resist, 4:1 Si
• Substrate size: up to 200 mm

Aluminum

• Equipment: Plasmatherm SSL-720
• Ambient: BCl3/Cl2/CH4
• Etch rate (A/min): 1500
• Selectivity: 2:1 resist
• Substrate size: up to 150 mm

Tungsten

• Equipment: Plasmatherm PT 72
• Ambient: CF4/SF6
• Etch rate (A/min): 1000
• Selectivity: NA
• Substrate size: up to 200 mm

Germanium

• Equipment: Plasmatherm PT 72
• Ambient: ?
• Etch rate (A/min): ?
• Selectivity: ?
• Substrate size: up to 200 mm

Molybdenum

• Equipment: Plasmatherm PT 72
• Ambient: CF4/SF6
• Etch rate (A/min): ?
• Selectivity: ?
• Substrate size: up to 200 mm

Photoresists

• Equipment: Plasmatherm PT 72
• Ambient: O2
• Etch rate (A/min): 1000
• Selectivity: NA
• Substrate size: up to 200 mm

Electron beam resists

• Equipment: Plasmatherm PT 72
• Ambient: O2
• Etch rate (A/min): ?
• Selectivity: NA
• Substrate size: up to 200 mm

Parylene

• Equipment: Plasmatherm PT 72
• Ambient: O2
• Etch rate (A/min): ?
• Selectivity: NA
• Substrate size: up to 200 mm

Polyimide

• Equipment: Plasmatherm PT 72
• Ambient: O2
• Etch rate (A/min): ?
• Selectivity: NA
• Substrate size: up to 200 mm

PLEASE NOTE: The following information suggests etch tools for specific materials. However, (this information) is not regularly updated. For up-to-date etch rates, please see specific tool pages.

Si Deep Bosch Etch

• Equipment: Unaxis 770
• Ambient: Bosch chemistry
• Etch rate (A/min): 18000
• Selectivity: 50:1 resist, 150:1 oxide
• Substrate size: 3 inch, 100 mm and 150 mm

PLEASE NOTE: The following information suggests etch tools for specific materials. However, (this information) is not regularly updated. For up-to-date etch rates, please see specific tool pages.

• Equipment: Oxford 100
• Ambient: ?
• Etch rate (A/min): ?
• Selectivity: ? resist, ? oxide
• Substrate size: 100 mm and 150 mm

PLEASE NOTE: The following information suggests etch tools for specific materials. However, (this information) is not regularly updated. For up-to-date etch rates, please see specific tool pages.

• Equipment: Xactix X-Etch
• Ambient: XeF2
• Etch rate (A/min):
• Selectivity: ? resist, ? oxide, ? metal
• Substrate size: pieces and full wafers up to 150 mm