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Procedure for creating baseline wafers (PDF)
Source: AFS
Date: 2/23/13
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Dry Etch Process Library
PLEASE NOTE: The following information suggests etch tools for specific materials. However, (this information) is not regularly updated. For up-to-date etch rates, please see specific tool pages.
Anisotropic silicon
- Equipment: Plasmatherm PT 770 left side
- Ambient: Cl2, BCl3, H2
- Etch rate (A/min): 3000
- Selectivity: 10:1 oxide
- Substrate size: 3 inch, 100 mm
Isotropic silicon release etch
- Equipment: Plasmatherm PT 72
- Ambient: SF6/O2
- Etch rate (A/min): 1100
- Selectivity: 300:1 oxide
- Substrate size: up to 200 mm
- Equipment: Oxford 80
- Ambient: SF6/O2
- Etch rate (A/min):
- Selectivity:
- Substrate size: up to 200 mm
Polysilicon
- Equipment: Plasmatherm PT 770 left side
- Ambient: Cl2, BCl3, H2
- Etch rate (A/min): 1500
- Selectivity: 3:1 nitride, 7:1 oxide
- Substrate size: 3 inch, 100 mm
Silicon dioxide
- Equipment: Plasmatherm PT 72
- Ambient: CHF3/O2
- Etch rate (A/min): 255
- Selectivity: 2:1 resist, 5:1 silicon
- Substrate size: up to 150 mm
- Equipment: Oxford 80
- Ambient: CHF3/O2
- Etch rate (A/min): 300
- Selectivity: 2:1 resist, 5:1 silicon
- Substrate size: up to 150 mm
PSG
- Equipment: Plasmatherm PT 72
- Ambient: CHF3/O2
- Etch rate (A/min): 330
- Selectivity: 2:1 resist
- Substrate size: up to 150 mm
Silicon nitride and low stress silicon nitride
- Equipment: Plasmatherm PT 72
- Ambient: CF4/H2
- Etch rate (A/min): 290
- Selectivity: 2:1 resist
- Substrate size: up to 200 mm
- Equipment: Oxford 80
- Ambient: CHF3/O2
- Etch rate (A/min): 600-650 for LPCVD, 750 PECVD
- Selectivity: 3:1 resist, 4:1 Si
- Substrate size: up to 200 mm
Aluminum
- Equipment: Plasmatherm SSL-720
- Ambient: BCl3/Cl2/CH4
- Etch rate (A/min): 1500
- Selectivity: 2:1 resist
- Substrate size: up to 150 mm
Tungsten
- Equipment: Plasmatherm PT 72
- Ambient: CF4/SF6
- Etch rate (A/min): 1000
- Selectivity: NA
- Substrate size: up to 200 mm
Germanium
- Equipment: Plasmatherm PT 72
- Ambient: ?
- Etch rate (A/min): ?
- Selectivity: ?
- Substrate size: up to 200 mm
Molybdenum
- Equipment: Plasmatherm PT 72
- Ambient: CF4/SF6
- Etch rate (A/min): ?
- Selectivity: ?
- Substrate size: up to 200 mm
Photoresists
- Equipment: Plasmatherm PT 72
- Ambient: O2
- Etch rate (A/min): 1000
- Selectivity: NA
- Substrate size: up to 200 mm
Electron beam resists
- Equipment: Plasmatherm PT 72
- Ambient: O2
- Etch rate (A/min): ?
- Selectivity: NA
- Substrate size: up to 200 mm
Parylene
- Equipment: Plasmatherm PT 72
- Ambient: O2
- Etch rate (A/min): ?
- Selectivity: NA
- Substrate size: up to 200 mm
Polyimide
- Equipment: Plasmatherm PT 72
- Ambient: O2
- Etch rate (A/min): ?
- Selectivity: NA
- Substrate size: up to 200 mm
Si Deep Reactive Ion Etching Process Database
PLEASE NOTE: The following information suggests etch tools for specific materials. However, (this information) is not regularly updated. For up-to-date etch rates, please see specific tool pages.
Si Deep Bosch Etch
- Equipment: Unaxis 770
- Ambient: Bosch chemistry
- Etch rate (A/min): 18000
- Selectivity: 50:1 resist, 150:1 oxide
- Substrate size: 3 inch, 100 mm and 150 mm
Fast Oxide Reactive Ion Etching Process Database
PLEASE NOTE: The following information suggests etch tools for specific materials. However, (this information) is not regularly updated. For up-to-date etch rates, please see specific tool pages.
- Equipment: Oxford 100
- Ambient: ?
- Etch rate (A/min): ?
- Selectivity: ? resist, ? oxide
- Substrate size: 100 mm and 150 mm
XeF2 Si Vapor Etching Process Database
PLEASE NOTE: The following information suggests etch tools for specific materials. However, (this information) is not regularly updated. For up-to-date etch rates, please see specific tool pages.
- Equipment: Xactix X-Etch
- Ambient: XeF2
- Etch rate (A/min):
- Selectivity: ? resist, ? oxide, ? metal
- Substrate size: pieces and full wafers up to 150 mm