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| @ 780 nm | Fused Silica Substrates | ITO-Coated Substrates | Silicon Substrates | Borosilicate Substrates | Microscope Slides |
|---|---|---|---|---|---|
| Material | Fused Silica | Soda Lime w/ ITO | Si Substrates | Borosilicate Sub | Microscope Slides |
| Sample Holder | DiLL | DiLL | DiLL | 10 × Ø 30 mm | DiLL |
| Refractive index | 1.454 | 1.624 [ITO] 1.518 [soda lime] | 3.710 | 1.517 | 1.518 |
| Dimension | [25, 25, 0.7] mm | [25, 25, 0.7] mm | [25, 25, 0.725] mm | 30 mm Ø, 170 µm | [22, 75, 1] mm |
| Thickness variation | ± 25 µm | ± 60 µm | ± 25 µm | ± 10 µm | ± 100 µm |
| Surface finish | DSP | DSP | Polished | DSP | DSP |
| Density | 2.2 g/cm3 | 2.5 g/cm3 | 2.3290 g/cm3 | ||
| Mohs hardness | 5.3-6.5 | 5-6 | 9-10 | ||
| Melting point | 1400°C | 1000°C | 3265°C | ||
| Thermal expansion coefficient | 0.54x10-6 K-1 | 0.937 W/m·K | 2.6 µm/(m·K) | ||
| Heat conductivity | 1.38 W/(m·K) | 0.937 W/(m·K) | 149 W/(m·K) | ||
| Compatible w/ Solution Set | 3D SF | 3D MF (3D SF, 2D ML) | 3D LF (3D MF, 3D SF, 2D ML) | 3D SF Oil | 3D SF |
| Compatible w/ 2PP resin | IP-DIP | IP-S | IP-Q (IP-S, IP-Dip, AZ resin) | IP-L 780 or IP-G 780 | None, unless coated |
| Compatible w/ Objective | 63X | 20x, 25x , 63x | 10x, (20x, 25x, 63x) | 63x | 63x |
| Combination & Ref index | -0.058 @ 20°C IP-Dip / -0.025 @ 20°C IP-S | -0.145 @ 20°20°C | |||
| Contrast | |||||
| Cleaning & Prep | O2-plasma & silanization | O2-plasma & silanization | RC1 |
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- Parts, particularly shell and scaffold components, may require a UV cure after development.
- Shell and scaffold parts contain uncured resin within solid walls. Failure to UV cure will result in weak parts and may leak resin.
- The resin's highest sensitivity is to 405 nm UV, however broad spectrum UV curing stations may also work.
- NOTE: The resin may burn or become distorted with UV power densities above 7 W/m2
- Typical maximum cure depth is 2.5 mm
- Recommended exposure time is 2-15 minutes, dependent on part geometry
- A UV curing box in the development hood is under construction
- Alternately, parts may be heat cured. IP-S cures in 5 minutes at 190C 190°C and 17 h at 140C140°C. Care must be taken to slowly heat samples; thermal shock may break your part off the substrate prematurely. IP-DIP and IP-L cannot be heat cured.
Model Removal
After printing and development, parts that are still on the substrate may need to be removed if they have no detached already. For robust parts on substrates that have poor adhesion, particularly silicon wafers, parts may be detached through simple mechanical means. However for more delicate parts or substrates with superior adhesion, a few methods can be used to remove parts:
Thermal shocking of the substrate via hot plate is an effective method for some parts, typically temperatures of ~90°C are adequate, higher temperatures may risk damaging or overcuring parts.
Silicon Wafer Substrate Production
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Once you have completed the alignment process (typically aligning only along the flat edge of the wafer is adequate), a total of at least 18 substrates will be produced. Take care to ensure that substrates are free of debris from cutting before using in the NanoScribe. Additional cleaning of substrates via sonication with consecutive baths acetone, IPA, and DI water is recommended.
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Advanced Printing Procedures
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